液相沉积,也称化学溶液沉积法(Chemical solution deposition, CSD)包括溶胶-凝胶法和金属有机热分解法(metal organic thermal decomposition, MOD), 是指颗粒(原子或分子)从溶液或悬浮液中沉降到预先存在的表面,导致新相生长的过程。CSD可用于制备铁电薄膜或多层复合薄膜。 化学气相沉积(Chemical Vapor Deposition, CVD)是将一种或多种含有薄膜元素的化合物引入到反应腔中,然后通过气相化学反应在衬底表面沉积固体薄膜来制备材料的一种气相生长方法。 原子层沉积(Atomic Layer Deposition, ALD)是一种将物质以单原子薄膜的形式放置在衬底表面的方法。 ALD由于其高度可控的(厚度、成分和结构),优异的沉积均匀性和一致性,在微纳米电子和纳米材料领域有着广泛的应用。 图片来源:https://pubs.acs.org/doi/10.1021/acs.chemrev.9b00164
产品编号 | 结构式 | 项目名称规格 | 分子式 | 加入购物车 |
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Z875025 |
![]() | 正丁醇锆(IV), 20 wt. %正丁醇溶液 Zirconium(IV) butoxide solution, 20 wt. %正丁醇溶液 |
ZrO4C16H36 | |
Z875024 |
![]() | 正丁醇锆(IV), 40 wt. %正丁醇溶液 Zirconium(IV) butoxide solution, 40 wt. %正丁醇溶液 |
ZrO4C16H36 | |
Z923165 |
![]() | 叔丁醇锆, electronic grade, 99.999% trace metals basis Zirconium(IV) tert-butoxide, electronic grade, 99.999% trace metals basis |
C16H36O4Zr | |
V820451 |
![]() | 乙酰丙酮氧钒, 99% Vanadyl acetylacetonate, 99% |
C10H14O5V | |
V820432 |
![]() | 乙酰丙酮钒(III), 97% Vanadium(III) acetylacetonate, 97% |
C15H21O6V | |
T914690 |
![]() | 叔丁醇钛, 98% Titanium(IV) tert-butoxide, 98% |
C16H36O4Ti | |
T871878 |
![]() | 六羰基钨, 99.9% metals basis Tungsten hexacarbonyl, 99.9% metals basis |
C6O6W | |
T819663 |
![]() | 六羰基钨, 97% Tungsten hexacarbonyl, 97% |
C6O6W | |
T819662 |
![]() | 六羰基钨, 99% Tungsten hexacarbonyl, 99% |
C6O6W | |
M886511 |
![]() | 五氯化钼, 99.90% Molybdenum(V) chloride, 99.90% |
MoCl5 | |
M874777 |
![]() | 甲基三氯硅烷, 99% Methyltrichlorosilane, 99% |
CH3SiCl3 | |
M838575 |
![]() | 十羰基二锰, 98% Manganese carbonyl, 98% |
C10Mn2O10 | |
M821331 |
![]() | 乙酰丙酮锰(II), ≥97% Manganese(II) acetylacetonate, ≥97% |
C10H14MnO4 | |
M813342 |
![]() | 乙酰丙酮镁, 二水合物, 98% Magnesium acetylacetonate dihydrate, 98% |
C10H14MgO4·2H2O | |
F809617 |
![]() | 二茂铁, 99% Ferrocene, 99% |
FeC10H10 | |
F809616 |
![]() | 二茂铁, 98% Ferrocene, 98% |
FeC10H10 | |
E922601 |
![]() | 乙酰乙酸乙酯钠盐, 90% Ethyl acetoacetate sodium salt, 90% |
C6H9O3Na | |
D868893 |
![]() | 二羰基环戊二烯钴(I), 95% Dicarbonylcyclopentadienylcobalt(I), 95% |
C7H5CoO2 | |
Z888687 |
![]() | 氯化锆(IV), 99.5%, hafnium chloride<50ppm Zirconium(IV) chloride, 99.5%, hafnium chloride<50ppm |
ZrCl4 | |
Z886148 |
![]() | 乙氧基锆, 97% Zirconium(IV) ethoxide, 97% |
C8H20O4Zr |